doi:

DOI: 10.3724/SP.J.1037.2013.00207

Acta Metallurgica Sinica (金属学报) 2013/49:12 PP.1611-1616

FABRICATION AND THERMAL STABILITY OF A1CrTaTiNi/(A1CrTaTiNi)N BILAYER DIFFUSION BARRIER


Abstract:
The (A1CrTaTiNi)N and A1CrTaTiNi/(A1CrTaTiNi)N thin films were deposited on Si substrates as copper interconnects diffusion barriers饰magnetron sputtering methods. The phase structure, phase composition and thermal stability at high temperature were investigated by XRD, EDS and SEM in this work, respectively. The results indicate that the gap could be observed between Cu and (A1CrTaTiNi)N layers when the samples were annealed at 500℃for 30 min, and the Cu film fall off at 700℃under visual conditions. The bonding properties of Cu and (A1CrTaTiNi)N layers can be improved by inserting a A1CrTaTiNi layer. The XRD patterns, SEM cross-sectional micrographs and sheet resistance data show that the A1CrTaTiNi/(A1CrTaTiNi)N bilayers is stable up to 800℃.

Key words:high-entropy alloy,bilayer diffusion barrier,thermal stability

ReleaseDate:2015-03-06 17:47:02



[1] Chen Y Y,Duval T,Hung U,Yeh J W,Shih H C.Corros Sci,2005:47:2257.

[2] Zhu J M,Fu H M,Zhang H F,Wang A M,Li H,Hu ZQ.Mater Sci Eng, 2010:A527:6975.

[3] Tang W Y, Chuang M H, Chen H Y, Yeh J W. Surf Coat Technol 2010:204:3118

[4] Chou Y L, Yeh J W, Shih H C. Corms Sci, 2010:52:2571.

[5] Chen Y Y, Duval T, Hung U D, Corms Sci, 2005:47:2679

[6] Yeh J W, Chen S K, Lin S J,Gan J Y, Chin T, Tsau T T, Chang S Y. Adv Eng Mater, 2004:6:299.

[7] Chang S Y, Chen M K. Thin Solid Films, 2009:517:4961.

[8] Tsai M H, Yeh J W, Gan J Y. Thin. Solid Films, 2008:516:5527.

[9] Chang S Y, Chen D S. App! Phys Lett, 2009:94:243

[10] Chang S Y, Wang C Y, Li C E, Huang Y C. NanoSci Nav,oTechreol Gett, 2011:3:289

[11] Chang S Y, Li C E, Huang Y C, Huang Y C. J Adloys Compd, 2012:515:4.

[12] Chang S Y, Chen D S. Mater Chem Phys, 2011:125:5.

[13] Zhao C R, Du H, Liu M X, Han Z S. Semico}nd Technof,2008:33:374(赵超荣,杜寰,刘梦新,韩郑生.半导体技术,2008:33:374)

[14] Ogawa E T, Lee K D, Matsuhashi H, Ko K S, Justison P R, Ramamurthi A N, Bierwag A J, Ho P S. 39th Annual International Reliability Physics Symposium Proceedings,Oriando, Florida:IEEE, 2001:341

[15] Wang L, Cao Z H, Hu K, She Q W, Meng X K. Mater Chemphys, 2012:135:806

[16] Liu C H, Liu W, Wang Y H, An Z, Song Z X, Xu K W. Microelect}non Eng, 2012:98:80.

[17] Wang Y S, Lee W H, Wang Y L, Hung C C, Chang S C.J Phys Chem Solids, 2008:69:601.

[18] Yang L Y, Zhang D H, Li C Y, Foo P D. Thin Solid Films,2004:462-463:176

[19] Tsao J C, Liu C P, Wang Y L, Chen K W, Lo K Y. J Phys Chem Solids, 2008:69:561.

[20] Traving M, Zienert I, Zschech E, Schindler G, Steinhogl W, Engelhardt M. App! Su可Sci, 2005:252:11

[21] Jacquemin J P, Labonne E, Yalicheff C, Royet E, Vannier P, Delsol R, Normandon P. Microelectron. Ereg, 2005:82:613.

[22] Hubner R, Hecker M, Mattern N, Hoffmann V, Wetzig K,Wenger C, Engelmann H J, Wenzel C, Zschech E, Bartha J W. Thin Solid Films, 2003:437:248.

[23] Zhang H Q, Slade C G, Antoinette M. J Mater Res, 2011:26:633.

[24] Shi C X, Zhong (a P, Li C G. The Dictionary of Chinese Materials Engineering. Beijing:Chemical Industry Press,2005:160(师昌绪,钟群鹏,李成功.中国材料工程大典.北京:化学工业出版社,2005:160)

[25] Shen Y L, Guo Y L, Minor C A. Acta Mater, 2000:48:1667.

[26] Davis J A, Meindl J D, translated by Luo Z Y, Ye Z C, Lv Y Q, Yu W J. Interconnect Technology and Design for Gigascale Integro,tion. Beijing:China Machine Press, 2010:128(Davis J A, Meindl J D著,骆祖莹,叶作昌,吕勇强,喻文健译.吉规模集成电路互联工艺及设计.北京:机械工业出版社,2010:128)

[27] Song Z X, Ju X H, Xu K W. Acta Metall Sin, 2002:38:723(宋忠孝,鞠新华,徐可为.金属学报,2002:38:723)

[28] Song Z X, Xu K W, Chen H. Microelectron Eng, 2004:71:28.

[29] Ryu C, Kwon K W, Loke A L S, Lee H, Nogami T, Dubin V M, Kavari R A, Ray G W, Wong S S. IEEE Trans Electron Devices, 1999:46:1113.

[30] Zheng G F, Fu J H, Li Y T, Du S W, Jiang L W. Heat Treat Met, 2013:38:113(郑光锋,付建华,李永堂,杜诗文,蒋立文.金属热处理,2013:38:113)

[31] Bai X Y, Wang Y, Xu K W. Rare Met Mater Eng, 2005:34:259(白宜羽,汪渊,徐可为.稀有金属材料与工程,2005:34:259)

[32] Yang Y T. Microelectron Technol, 2000:28(1):37(杨银堂.微电子技术,2000:28(1):37)

[33] Cao Z H, Hu K, Meng X K. J ApPI Phys, 2009:106:113513.