doi:

DOI: 10.3724/SP.J.1010.2013.00210

Journal of Infrared and Millimeter Waves (红外与毫米波学报) 2013/32:3 PP.210-213,224

Long wavelength infrared detector based on Type-II InAs/GaSb superlattice


Abstract:
A 12.5 μm long wavelength infrared detector based on InAs/GaSb Type-II superlattice was presented in this work.Superlattice materials were grown on GaSb substrates using MBE technology.Absorber structure for long wavelength detector was designed to be 15ML(InAs)/7ML(GaSb).The detector used a PBIN multiple heterostructures to decrease the dark current.The dark current I-V curve,responsivity spectra and blackbody current responsivity were measured at 77 K.At this temperature,RmasA product was 2.5 Ωcm2 for the device with a photo sensitive area of 100 μm×100μm.At zero bias,a current responsivity of 1.29 A/W was measured for the detector,which correspond to a blackbody detectivity of 2.1×109 cmHz1/2/W.Quantum efficiency at 11 μm was measured to be 14.3%.Dark current characteristics were simulated with four kinds of probable transport mechanisms.The results showed that the dominated dark current of the detector is Generation-Recombination current.

Key words:InAs/GaSb superlattice,long wavelength,dark current

ReleaseDate:2015-05-04 09:27:03



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