DOI: 10.3724/SP.J.1010.2013.00481

Journal of Infrared and Millimeter Waves (红外与毫米波学报) 2013/32:6 PP.481-485

Effects of compositional overshoot on InP-based InAlAs metamorphic graded buffer

In0.78Ga0.22As/In0.78Al0.22As As quantum wells and In0.84Ga0.16As photodetctor samples have been grown on InPbased InxAl1-xAs metamorphic graded buffers to investigate the effects of compositional overshoot on the material characteristics.Atomic force microscopy results show that the surface roughness is reduced by the compositional overshoot in the InAlAs buffer layers for both the quantum well and photodetector samples.In the case of thin quantum wells,X-ray diffraction reciprocal space mapping and photoluminescence measurements show that the use of compositional overshoot can increase the relaxation degree,reduce the residual strain and improve the optical quality.While in the case of thicker photodetectors,no obvious improvement is observed after using compositional overshoot.The different behaviours of the metamorphic quantum wells and photodetectors should be considered in the device applications.

Key words:InAlAs,buffer,X-ray diffraction,photoluminescence

ReleaseDate:2015-05-04 09:28:01

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