doi:

DOI: 10.3724/SP.J.1010.2013.00498

Journal of Infrared and Millimeter Waves (红外与毫米波学报) 2013/32:6 PP.498-501

The difference between etching bromine and polishing on HgCdTe material and photoconductive detector


Abstract:
Etching and polishing with bromine are two different surface treatments for HgCdTe material.To evaluate the effectiveness of the surface treatment,both the mobility dependence of carrier concentration and temperature dependence of the mobility were investigated.Then,the material treated with the two different methods was fabricated into detectors.Resistivity as a function of temperature was measured.The experiments indicated that there are more surface electrons and ionized impurity scattering in the material treated by bromine etching than that treated by polishing,wherein lattice scattering plays a major role.Thus the performance of the final detector made of material treated by polishing is much better.

Key words:HgCdTe,bromine polishing,mobility,resistivity versus temperature

ReleaseDate:2015-05-04 09:28:03



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