DOI: 10.3724/SP.J.1077.2010.00468

Journal of Inorganic Materials (无机材料学报) 2010/25:5 PP.468-472

Structure and Dielectric Properties of HfO2 Thin Films

HfO2 dielectric thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method. The structure of films was characterized by X-ray diffraction (XRD) and extended X-ray absorption fine structure spectroscope (EXAFS). The phonons modes and dielectric properties were investigated by far infrared spectroscope. These results show that the thin films deposited at room temperature and 400℃ are amorphous and monoclinic phase, respectively. The crystallization quality of the film is improved after annealing at 1000℃. The HfO2 thin film has shorter HfO bonding length and higher disorder than those of HfO2 powder. Some far infrared phonon modes disappear due to the higher disorder and worse crystalline quality of thin film, which causes the dielectric constant of thin film smaller than that of powder sample. However, main infrared phonon modes are preserved and the crystallized thin film still has enough value of dielectric constant.

Key words:HfO2 films,high dielectric gate,pulsed laser deposition,phonon

ReleaseDate:2014-07-21 15:16:56

[1] Robertson J. Maximizing performance for higher k gate dielectrics. J. Appl. Phys., 2008, 104(12): 124111-1-7.

[2] Robertson J. High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys., 2000, 69(2): 327-396.

[3] Wilk G D, Wallace R M, Anthony J M. High-k gate dielectrics: current status and materials properties considerations. J. Appl. Phys., 2001, 89(10): 5243-5272.

[4] Rauwel E, Dubourdieu C, Hollander B, et al. Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition, Appl. Phys. Lett., 2006, 89(1): 012902-1-3.

[5] Wang H, Wang Y, Feng J, et al. Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (100). Appl. Phys A., 2008, 93(3): 681-684.

[6] Lu Y K, Zhu W, Chen X F, et al. Interface control in the laser MBE growth of hafnium oxide. Thin Solid Films, 2006, 504(1): 188-191.

[7] He G, Zhu L Q, Liu M, et al. Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films. Applied Surface Science, 2007, 253(7): 3413-3418.

[8] Stern E A, Newville M, Ravel B, et al. The UWXAFS analysis package: philosophy and details. Physica B, 1995, 208(12): 117-120.

[9] Zabinsky S. Multiple-scattering calutions of X-ray-absorption spectra. Phys. Rev. B, 1995, 52(4): 2995-3009.

[10] Lysaght P S, Woicik J C, Sahiner M A, et al. Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature. J.Non-crystal Solids, 2008, 354(5): 399-403.

[11] Scopel W L, da Silva A J R, Fazzio A. Amorphous HfO2 and Hf1-xSixO via a melt-and-quench scheme using ab initio molecular dynamics. Phy. Rev. B, 2008, 77(17):172101-1-4.

[12] Cho D Y, Park T J, Na K D, et al. Structural disorders in an amorphous HfO2 film probed by X-ray absorption fine structure analysis.Phy. Rev. B, 2008, 78(13):132102-1-4.

[13] Kuzmenko A B. Kramers-Kronig constrained variational analysis of optical spectra. Rev. Sci.Instrum., 2005, 76(8): 083108-1-9.

[14] Zhao X Y, Vanderbilt D. Kramers-Kronig constrained variational analysis of optical spectra. Phy. Rev. B, 2002, 65(23): 233106-1-4.

[15] Hackley J C, Gougousi T. Properties of atomic layer deposited HfO2 thin films. Thin Solid Films,2009, 517(24): 6576-6583.

[16] Gavartin J, Shluger A. Ab initio modeling of electron-phonon coupling in high-k dielectrics. Phys. Stat. Sol. (C), 2006, 10(3): 3382-3385.

[17] Wang Z J, Kumagai T, Kokawa H. Crystalline phases, microstructures andelectrical properties of hafnium oxide films deposited by Sol-Gel method. Journal of Crystal Growth, 2005, 281(3): 452-457.

[18] Dai J Y, Lee P F, Wong K H, et al. Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si. J. Appl. Phys., 2003, 94(12): 912-916.

[19] Sayan S, Aravamudhan S, Busch B W, et al. Chemical vapor deposition of HfO2 film on Si(100). J. Vac. Sci. Technol. A, 2002, 20(2):507-512.

[20] Chen Y C, Liu H L, Cheng H F. Dielectric properties of Bi2(Zn1/3Nb2/3)2O7 thin films measured by Fourier transform infrared spectroscopy. J. Euro. Ceram. Soc. 2001, 21(10):1711-1714.

[21] Wang Y X. Giant static dielectric constant of strained PbTiO3. Chin. Phys. Lett., 2009, 26(1): 016801-1-3.