doi:

DOI: 10.3724/SP.J.1077.2014.13549

Journal of Inorganic Materials (无机材料学报) 2014/29:7 PP.729-734

Influence of Deposition and in situ Annealing Time on Composition and Optical Band Gap of h-BN Films Deposited by PECVD


Abstract:
Series of h-BN films were grown by RF plasma enhanced chemical vapor deposition (PECVD) technique using high purity nitrogen and diborane as the precursor gases. The optimized experimental conditions for preparing h-BN films were explored. Based on these explorations, influences of deposition time and in situ annealing time on the composition and optical band gap of the films were investigated. All specimens were characterized by Fourier transform infrared spectroscope, utraviolet-visible spectrophotometer and field emission scanning electron microscope. The results show that the deposition time has a significant impact on the quality and optical band gap of the samples, and the optical band gap exhibits an exponential relation with the varied thickness of the films. Moreover, in situ annealing at 700℃ can affect the crystal quality, but almost not the phase and optical band gap of the h-BN films.

Key words:h-BN films,deposition time,annealing time,optical band gap

ReleaseDate:2016-07-11 11:25:03



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