DOI: 10.3724/SP.J.1077.2014.13562

Journal of Inorganic Materials (无机材料学报) 2014/29:7 PP.753-757

Influence of Growth Temperature and Oxygen Pressure on Laser-induced Voltage Effect of La0.67Sr0.33MnO3:Ag0.08 Thin Films

La0.67Sr0.33MnO3:Ag0.08 (LSMO:Ag0.08) polycrystalline ceramics were prepared by chemical co-precipitation method, and then La0.67Sr0.33MnO3:Ag0.08 thin films were prepared on vicinal cut LaAlO3 (LAO) substrates by pulsed laser deposition (PLD) technique. Effects of growth temperature and oxygen pressure on structure, electrical transport properties and laser-induced voltage (LIV) effect were investigated. The results show that the maximum LIV peak (Up), the figure of merit (Fm) and anisotropy Seebeck coefficient (?S) are obtained for LSMO:Ag0.08 thin films when growth temperature and oxygen pressure are 790 ℃ and 45 Pa, respectively. The LIV enhancement of LSMO:Ag0.08 thin films is due to the anisotropy of the Seebeck coefficient, which is produced by long range cooperative Jahn-Teller distortions under optimal growth temperature and oxygen pressure conditions.

Key words:growth temperature,oxygen pressure,pulsed laser deposition,laser-induced voltage,anisotropic Seebeck coefficient

ReleaseDate:2016-07-11 11:25:04

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