doi:

DOI: 10.3724/SP.J.1249.2013.04398

Journal of Shenzhen University Science and Engineering (深圳大学学报理工版) 2013/30:4 PP.398-403

Influence of Helium plasma pre-treatment on properties of polycrystalline silicon films


Abstract:
Polycrystalline silicon thin films deposited on p-type (100) silicon wafer substrates were prepared by means of microwave electron cyclotron resonance plasma-enhanced magnetron sputtering (ECR-PEMS) and microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low temperatures in the present work.To characterize the microstructure and surface morphology of the films, the Raman spectroscopy, X-ray diffraction and atomic force microscopy were used.The study focuses on the effect of pure helium plasma substrate pre-treatment on the deposited film properties.The results show that the film crystallinity and grain size are obviously enhanced by the helium plasma pre-treatment in both deposition processes.At the same time, the microstructure and surface morphology of polycrystalline silicon film with ECR-CVD are improved.

Key words:plasma,polycrystalline silicon thin films,electron cyclotron resonance,plasma enhanced,helium plasma,magnetron sputtering,chemical vapor deposition,film crystallinity,nanomaterials

ReleaseDate:2014-07-21 16:56:23

Funds:Foundation for Distinguished Young Talents in Higher Education of Guangdong (2012LYM0115); Shenzhen Technology Research Foundation for Basic Project (JC201005280485A)



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