DOI: 10.3724/SP.J.1249.2019.02189

Journal of Shenzhen University Science and Engineering (深圳大学学报理工版) 2019/36:2 PP.189-192

Broad band antireflection in terahertz band based on vanadium dioxide phase transition

By introducing a conducting thin film of VO2 into the interface between the air and fused silica substrate, we realize the broad band antireflection in a terahertz(THz) frequency band based on temperature-induced VO2 insulator-metal phase transition. At the same time, we also investigate the conductivity of the temperature induced VO2 film and its influence on the antireflection property with THz spectroscopy. The main results obtained in the study are universal, and are also applicable to the antireflection phenomena investigation on the interfaces between the optical devices and the antireflection design in the microwave band.

Key words:optics,antireflection,insulator-metal phase transition,terahertz wave,VO2,optical interface,impedance matching

ReleaseDate:2019-12-02 09:24:38

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